Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2006-02-14
2006-02-14
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S149000
Reexamination Certificate
active
06998652
ABSTRACT:
A semiconductor device includes a thyristor body having at least one region in a substrate. According to an example embodiment of the present invention, a trench is in a substrate and adjacent to a thyristor body region in the substrate. The trench is lined with an insulative material and further includes conductive material that is insulated from the thyristor body region in the substrate by the liner material. A conductive thyristor control port is located in the trench and adapted for capacitively coupling to the thyristor body region in the substrate and to control current in the thyristor body by causing an outflow of minority carriers in the thyristor. With this approach, conductive material can be used to fill a portion of the trench while using the trench portion including the conductive material to electrically isolate a portion of the thyristor body in the substrate. This approach is particularly useful, for example, in high-density applications where insulative trenches having high aspect ratios are desired.
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Horch Andrew
Robins Scott
Pizarro-Crespo Marcos D.
T-Ram, Inc.
Weiss Howard
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