Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-03-07
1997-04-15
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
250548, 25055929, 257184, H01L 31075
Patent
active
056212380
ABSTRACT:
A semiconductor based radiation detector utilizing a dual absorption layer system design to selectively respond to particular bands of incident radiation while rejecting others. Generally, a top absorption layer initially absorbs all radiation less than a cutoff wavelength. Radiation longer than the cutoff pass to a buried or second absorption layer. This second absorption layer has a smaller band gap energy corresponding with a larger cutoff wavelength than the top layer and is therefore responsive to longer wavelengths or radiation with lower energies. As such, preselected wavelengths or energy bands are detectable by the second layer while all other wavelengths or energy bands are either absorbed by the top layer or passed through both layers. The resultant absorption in the second layer is thereafter detectable to indicate the presence of the desired wavelength.
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Dodd Mark A.
Reitz Larry F.
Scheihing John E.
Kundert Thomas L.
Meier Stephen
Scearce Bobby D.
The United States of America as represented by the Secretary of
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