Misalignment-tolerant electronic interfaces and methods for...

Details Misalignment-tolerant electronic interfaces and methods for... Misalignment-tolerant electronic interfaces and methods for...

2006-05-23

2006-05-23

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257SE51032, C257SE51032, C716S030000, C716S030000, C716S030000, C708S001000, C708S441000, C708S520000

Reexamination Certificate

active

07049626

ABSTRACT:
A nanoscale or partial nanoscale interface within an electronic device, and a method for producing such interfaces without the need for precise nanoscale alignment of nanoscale elements of a first circuit layer to elements of a second circuit layer, is disclosed. In one embodiment, dimensions of conductive windows fabricated on microelectronic elements are carefully specified, and redundant nanoscale elements are introduced, in order to produce functional nanoscale-to-microscale interfaces despite imprecise nanoscale alignment of nanoscale elements to microscale elements.

REFERENCES:
patent: 6900479 (2005-05-01), DeHon et al.
patent: 6963077 (2005-11-01), DeHon et al.

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