Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-10-17
2006-10-17
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Reexamination Certificate
active
07122838
ABSTRACT:
A solid-state imaging device is provided, in which both a reduction in a read voltage and enhancement of a transfer efficiency are satisfied. A p type well507is formed on an n type semiconductor substrate506, and a CCD channel region102is formed on a surface region of the p type well507. A gate insulating film510is formed on a surface of the CCD channel region102, and first electric charge transfer electrodes503are formed on the gate insulating film510. An interlayer insulating film511is formed on circumferences of the first electric charge transfer electrodes, and second electric charge transfer electrodes504are formed between the first electric charge transfer electrodes on the gate insulating film510. An electrode length L1 of the second electric charge transfer electrodes504is longer than an electrode length L2 of the first electric charge transfer electrodes503, and n−type potential level difference regions113are formed in upstream side portions of the CCD channel region under the second electric charge transfer electrodes504by p type impurity implantation.
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Hamre Schumann Mueller & Larson P.C.
Potter Roy
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