Molecular photoresists containing nonpolymeric silsesquioxanes

Details Molecular photoresists containing nonpolymeric silsesquioxanes Molecular photoresists containing nonpolymeric silsesquioxanes

2006-11-28

2006-11-28

Moore, Margaret G. (Department: 1712)

Organic compounds -- part of the class 532-570 series

Organic compounds

Silicon containing

C556S439000, C556S425000, C556S449000, C430S270100, C430S313000, C430S323000, C430S330000, C430S331000, C430S326000, C430S905000, C430S926000

Reexamination Certificate

active

07141692

ABSTRACT:
A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tgof greater than 50° C., and the RCLsubstituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

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