Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-06-13
2006-06-13
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S703000, C257S522000
Reexamination Certificate
active
07061100
ABSTRACT:
A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.
REFERENCES:
patent: 5401687 (1995-03-01), Cole et al.
patent: 5524339 (1996-06-01), Gorowitz et al.
patent: 5668398 (1997-09-01), Havemann et al.
patent: 5757072 (1998-05-01), Gorowitz et al.
patent: 5874321 (1999-02-01), Templeton, Jr. et al.
patent: 5888627 (1999-03-01), Nakatani
patent: 6038133 (2000-03-01), Nakatani et al.
patent: 6057600 (2000-05-01), Kitazawa et al.
patent: 6501016 (2002-12-01), Sosnowski
patent: 6538210 (2003-03-01), Sugaya et al.
patent: 6566170 (2003-05-01), Marion et al.
patent: 6683795 (2004-01-01), Yoo
patent: 6710449 (2004-03-01), Hyoto et al.
patent: 2001/0045010 (2001-11-01), Hirabayashi
patent: 0 920 058 (1999-02-01), None
patent: 10-284657 (1998-10-01), None
patent: 2856192 (1998-11-01), None
patent: 11-45955 (1999-02-01), None
patent: 11-220262 (1999-08-01), None
patent: 3051700 (2000-03-01), None
patent: 99/67818 (1999-12-01), None
Asahi Toshiyuki
Idogawa Yoshinobu
Iwaki Hideki
Nishiyama Tousaku
Ogura Tetsuyosi
Hamre Schumann Mueller & Larson P.C.
Weiss Howard
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