Structures and methods for integration of ultralow-k...

Details Structures and methods for integration of ultralow-k... Structures and methods for integration of ultralow-k...

2006-08-08

2006-08-08

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23144, C257SE23167, C257SE23052, C257S744000, C257S751000, C257S758000, C257S700000, C257S701000, C257S702000, C257S703000, C174S266000, C174S257000, C029S852000, C029S831000

Reexamination Certificate

active

07088003

ABSTRACT:
An improved back end of the line (BEOL) interconnect structure comprising an ultralow k (ULK) dielectric is provided. The structure may be of the single or dual damascene type and comprises a dense thin dielectric layer (TDL) between a metal barrier layer and the ULK dielectric. Disclosed are also methods of fabrication of BEOL interconnect structures, including (i) methods in which a dense TDL is provided on etched opening of a ULK dielectric and (ii) methods in which a ULK dielectric is placed in a process chamber on a cold chuck, a sealing agent is added to the process chamber, and an activation step is performed.

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