Method for depositing a material of controlled, variable thickne

Details Method for depositing a material of controlled, variable thickne Method for depositing a material of controlled, variable thickne

1998-04-06

2000-03-07

Chaudhari, Chandra

Semiconductor device manufacturing: process

Including control responsive to sensed condition

438 12, H01L 2100

Patent

active

060339217

ABSTRACT:
A method is provided for obtaining a topography with a substantially planar upper surface. The profile of the upper surface of the semiconductor topography is first detected by a profile detection tool, such as a stylus profilometer. The profile detection tool creates a database to quantify the elevational variations across the upper surface of the semiconductor topography. The database is then provided to a control system of a deposition tool. The control system controls the deposition of a profile layer upon the upper surface of the semiconductor topography such that a thickness of the profile layer is a function of the elevation of the surface. In one embodiment, the control system controls a potential gradient across the semiconductor topography so as to cause more reactant species to be directed toward the more recessed regions of the topography. In another embodiment, the control system controls the opening and closing of valves disposed within a shower head above the semiconductor topography. More reactant species are allowed to pass from those valves positioned directly above the more recessed regions of the topography. The resulting upper surface of the semiconductor topography is thus planar.

REFERENCES:
patent: 5731994 (1998-03-01), Okubu et al.

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