Method for determining metal work function by formation of...

Details Method for determining metal work function by formation of... Method for determining metal work function by formation of...

2006-05-16

2006-05-16

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S016000

Reexamination Certificate

active

07045384

ABSTRACT:
A method of determining a work function of a metal to be used as a metal gate material provides a metal-on-silicon (MS) Schottky diode on a silicon substrate. The MS Schottky diode is formed by deposition of the metal in a single step deposition through a shadow mask that is secured on the silicon substrate.

REFERENCES:
patent: 4782302 (1988-11-01), Bastasz et al.
patent: 5159486 (1992-10-01), Webb
patent: 5219769 (1993-06-01), Yonehara et al.
patent: 5608287 (1997-03-01), Hung et al.
patent: 6903433 (2005-06-01), McFarland et al.
Characteristices of Al/p-CuAgINSe Polycrystalline Thin Film Schottky Barrier Diodes; G Venkata Rao; Mar. 6, 2001Thin Film Laboratory, Department of Physics, Sri Venkateswara University; pp. 571-576.

Affiliated with

Also associated with

Rating

Method for determining metal work function by formation of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for determining metal work function by formation of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining metal work function by formation of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3618305