Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-06-27
2006-06-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S737000, C257S738000
Reexamination Certificate
active
07067929
ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of (a) forming a wiring layer on a semiconductor substrate having an integrated circuit and a pad electrically connected to the integrated circuit, the wiring layer being electrically connected to the pad, (b) forming a resin layer covering the wiring layer, (c) forming a first concave portion at an area of the resin layer, the area overlapping the wiring layer, by a first process, (d) forming a through-hole in the resin layer by removing a bottom of the first concave portion by a second process, the second process differing from the first process, and forming a second concave portion in the wiring layer in such a way that an angle between an osculating plane at any point of a surface of the second concave portion and a top surface of the wiring layer, with the angle being defined outside the second concave portion is 90° or more and (e) providing an external terminal in the second concave portion of the wiring layer.
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Hanaoka Terunao
Kurosawa Yasunori
Flynn Nathan J.
Hogan & Hartson LLP
Sandvik Benjamin P.
Seiko Epson Corporation
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