Semiconductor wafer, semiconductor device, circuit board,...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

Reexamination Certificate

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C257S737000, C257S738000

Reexamination Certificate

active

07067929

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of (a) forming a wiring layer on a semiconductor substrate having an integrated circuit and a pad electrically connected to the integrated circuit, the wiring layer being electrically connected to the pad, (b) forming a resin layer covering the wiring layer, (c) forming a first concave portion at an area of the resin layer, the area overlapping the wiring layer, by a first process, (d) forming a through-hole in the resin layer by removing a bottom of the first concave portion by a second process, the second process differing from the first process, and forming a second concave portion in the wiring layer in such a way that an angle between an osculating plane at any point of a surface of the second concave portion and a top surface of the wiring layer, with the angle being defined outside the second concave portion is 90° or more and (e) providing an external terminal in the second concave portion of the wiring layer.

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patent: 5677566 (1997-10-01), King et al.
patent: 6287893 (2001-09-01), Elenius et al.
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patent: 6387808 (2002-05-01), Schiltz et al.
patent: 6455408 (2002-09-01), Hwang et al.
patent: 6518162 (2003-02-01), Ono et al.
patent: 2002/0008320 (2002-01-01), Kuwabara et al.
patent: 2002/0167013 (2002-11-01), Iwasaki et al.
patent: 11-297873 (1999-10-01), None
patent: 2003-209137 (2003-07-01), None
patent: WO00/55898 (2000-09-01), None

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