Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-05-02
2006-05-02
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S010000, C257S011000, C257S012000, C257S013000, C257S015000, C257S016000, C257S017000, C257S018000, C257S020000, C257S021000, C257S022000, C257S023000, C257S024000, C257S025000
Reexamination Certificate
active
07038233
ABSTRACT:
An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.
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Ohtoshi Tsukuru
Tsuchiya Tomonobu
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Opnext Japan, Inc.
Reed Smith LLP
Soward Ida M.
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