Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-09-26
2006-09-26
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S005000, C257S315000
Reexamination Certificate
active
07112815
ABSTRACT:
Multi-layer memory arrays and methods are provided. A memory array has two or more layers of memory material, each layer of memory material having an array of memory cells. A first contact penetrates through each layer of memory material in a first plane and is electrically connected to each layer of memory material so as to electrically interconnect the layers of memory material in the first plane. A second contact penetrates through at least one of the layers of memory material in a second plane substantially perpendicular to the first plane.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Pham Hoai
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