Plasma processing method

Details Plasma processing method Plasma processing method

2006-04-04

2006-04-04

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000

Reexamination Certificate

active

07022615

ABSTRACT:
A plasma processing method for processing a surface of an object to be processed made of a metal or a semiconductor by applying activated particles generated by a microplasma generated at a pressure of not lower than 10,000 Pa and not higher than three atmospheric pressures to the surface of the object, the method includes removing a natural oxide film on the surface of the object, and etching a part or whole of a region in which the natural oxide film has been removed.

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patent: 2004-146773 (2004-05-01), None

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