Method of making field effect transistor with a sealed diffusion

Details Method of making field effect transistor with a sealed diffusion Method of making field effect transistor with a sealed diffusion

1993-12-01

1995-05-30

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437161, 437190, 437200, 437950, H01L 21225

Patent

active

054200580

ABSTRACT:
A field effect transistor is fabricated with an ion implanted silicide layer and a conducting diffusion barrier pad layer that acts as a diffusion mask. The dopants from the silicide layer are diffused into the substrate to form shallow source/drain regions.

REFERENCES:
patent: 4764481 (1988-08-01), Alvi et al.
patent: 4788160 (1988-11-01), Havemann et al.
patent: 4844776 (1989-07-01), Lee et al.
patent: 4922311 (1990-05-01), Lee et al.

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