Method of making group III nitride compound semiconductor...

Details Method of making group III nitride compound semiconductor... Method of making group III nitride compound semiconductor...

2006-07-18

2006-07-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S022000, C438S046000

Reexamination Certificate

active

07078252

ABSTRACT:
A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The filling material has a refractive index substantially equal to that of the III group nitride system compound semiconductor layer or closer to that of the III group nitride system compound semiconductor layer than that of the transparent substrate.

REFERENCES:
patent: 6376866 (2002-04-01), Shakuda
patent: 6633054 (2003-10-01), Hirata et al.
patent: 2001-267242 (2001-09-01), None

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