Semiconductor device having a conductive layer with a light...

Details Semiconductor device having a conductive layer with a light... Semiconductor device having a conductive layer with a light...

Filed on

2006-09-05

Date issued

2006-09-05

Examiner

Tran, Minh-Loan (Department: 2826)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Non-single crystal, or recrystallized, semiconductor...

SubSubClass

Amorphous semiconductor material

Other Related Categories

C257S072000, C257S642000, C257SE33064

Type

Reexamination Certificate

Status

active

Patent number

07102164

Description

ABSTRACT:
A semiconductor device having a substrate: a semiconductor film having at least two impurity regions, and at least one channel forming region; a gate insulating film; a gate electrode; an interlayer insulating film having an organic resin; a first conductive layer connected with one of the at least two impurity regions of the semiconductor film, where the first conductive layer has a light shielding part overlapping with at least the channel forming region; a pixel electrode; and a second conductive layer electrically connected with the other one of the at least two impurity regions, where the first and second conductive avers and the pixel electrode are provided on a same surface over the interlayer insulating film and the pixel electrode is electrically connected to the other one of the two impurity regions through the second conductive layer.

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