Manufacturing method for SOI-type thin film transistor

Details Manufacturing method for SOI-type thin film transistor Manufacturing method for SOI-type thin film transistor

1991-12-31

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 40, 437 41, 148DIG77, 148DIG150, 257 66, 257 67, H01L 21265

Patent

active

054200482

ABSTRACT:
An SOI-type thin film transistor having a transparent insulating substrate a first gate electrode, a first gate insulating film, a semiconductor layer, a second gate electrode and a second gate insulating film which are respectively formed on the transparent insulating substrate, wherein the width of the first gate electrode and that of the second gate electrode are different from each other and as well as the thickness of the first gate insulating film and that of the second gate insulating film are different from each other.

REFERENCES:
patent: 4263709 (1981-04-01), Weitzel et al.
patent: 4720736 (1988-01-01), Takafuji et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4788157 (1988-11-01), Nakamura
patent: 4951113 (1990-08-01), Huang et al.
patent: 4954855 (1990-09-01), Mimura et al.
patent: 5032883 (1991-07-01), Wakai et al.
patent: 5202572 (1993-04-01), Kobayashi
Extended Abstracts, 22nd Conf. Solid State Devices & Materials, Aug. 22-24, 1990, pp. 1195-1196, Ueda et al. "A 5 non thick ultra-thin double-gated poly Si TFT using Si2H6 as a source gas".
Pat. Abs. Jp. vol. 15, No. 78, Feb. 22, 1991.
Pat. Abs. Jp. vol. 9, No. 225, Sep. 11, 1985.
Olin Hunt, "Waycoat HPR 200" Positive Working Resists, 5 Garret Mountain Plaza, West Paterson, N.J. 07424, pp. 1-13, [date unknown].

Affiliated with

Also associated with

Rating

Manufacturing method for SOI-type thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for SOI-type thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for SOI-type thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-361110