Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-03-07
2006-03-07
Hoang, Huang (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200, C365S189090
Reexamination Certificate
active
07009882
ABSTRACT:
A method is provided of regulating a supply voltage for providing a bit line voltage in a semiconductor memory device where the bit line voltage is provided to memory cells in a bit line from the supply voltage through a bit switch. A bit line current provided to the memory cells is detected. The supply voltage is adjusted responsive to the deducted bit line current to at least partially compensate for a voltage drop across the bit switch where the voltage drop is dependent at least in part on the bit line current.
REFERENCES:
patent: 5576991 (1996-11-01), Radjy et al.
patent: 5642311 (1997-06-01), Cleveland et al.
patent: 5706240 (1998-01-01), Fiocchi et al.
patent: 5790466 (1998-08-01), Hotta
patent: 6046932 (2000-04-01), Bill et al.
patent: 2005/0226051 (2005-10-01), Bedarida et al.
Elite Semiconductor Memory Technology Inc.
Hoang Huang
Morris LLP Duane
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