Method for fabricating a test interconnect for bumped...

Details Method for fabricating a test interconnect for bumped... Method for fabricating a test interconnect for bumped...

2006-05-16

2006-05-16

Chang, Richard (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S825000, C029S827000, C029S832000, C029S837000, C029S838000, C029S846000, C439S067000, C439S071000, C439S082000

Reexamination Certificate

active

07043831

ABSTRACT:
A method for fabricating an interconnect for semiconductor components includes the steps of: providing a substrate; forming a metal layer on the substrate; etching projections in the metal layer; etching the metal layer to form patterns of leads; etching recesses in the substrate to cantilever the leads and form contacts for electrically engaging bumped contacts on a component; and then forming conductors to the leads. With the substrate comprising silicon, insulating layers can also be formed on the substrate, and within the recesses, for electrically insulating the leads and the conductors. With the conductors formed on a same surface of the substrate as the contacts, the same etching process can be used to form the conductors and the leads.

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Technical report, Shin-Etsu Inter Connector, MT-Type, Shin-Etsu Polymer America, Inc., No. MT-TYPE US, pp. 1-4 and title page, Aug. 5, 1998.
Information displayed at Chip Con 1997-1998, 4 sheets on FE CRD Floating Point Technology, (month unavailable).

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