Semiconductor device having standby mode and active mode

Details Semiconductor device having standby mode and active mode Semiconductor device having standby mode and active mode

2006-04-04

2006-04-04

Phan, Trong (Department: 2827)

Static information storage and retrieval

Powering

C365S227000

Reexamination Certificate

active

07023754

ABSTRACT:
An internal potential generation circuit of an SDRAM includes a standby VDDS generation circuit which has a relatively low current driving force and which generates an internal power supply potential, and an active VDDS generation circuit which has a relatively high current driving force, which is activated during a period after an external power supply potential is applied until a negative potential reaches a threshold potential, and in an activation period, and which generates the internal power supply potential. Therefore, it is possible to raise the internal power supply potential stably without increasing standby current when the power supply is turned on.

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