Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-03-07
2006-03-07
Chapman, Mark A. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S313000, C430S319000, C438S948000
Reexamination Certificate
active
07008736
ABSTRACT:
The present invention relates to a micromininiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180° is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.
REFERENCES:
patent: 3842202 (1974-10-01), Coale
patent: 4037918 (1977-07-01), Kato
patent: 4195909 (1980-04-01), Holle et al.
patent: 4360586 (1982-11-01), Flanders et al.
patent: 4779001 (1988-10-01), Makosch
patent: 4809341 (1989-02-01), Matsui et al.
patent: 4814244 (1989-03-01), Kuguchi et al.
patent: 4883359 (1989-11-01), Ina et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 4925755 (1990-05-01), Yamaguchi et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5045419 (1991-09-01), Okumura
patent: 5306585 (1994-04-01), Okamoto
patent: 0090924 (1983-10-01), None
patent: 535572 (1976-07-01), None
patent: 576849 (1980-06-01), None
patent: 5754939 (1980-09-01), None
patent: 150225 (1980-11-01), None
patent: 56-38475 (1981-04-01), None
patent: 168655 (1981-12-01), None
patent: 5762052 (1982-04-01), None
patent: 173744 (1983-10-01), None
patent: 129423 (1984-07-01), None
patent: 59168449 (1984-09-01), None
patent: 208830 (1984-11-01), None
patent: 98625 (1985-06-01), None
patent: 62189468 (1986-02-01), None
patent: 113234 (1986-05-01), None
patent: 1292643 (1986-12-01), None
patent: 61290306 (1986-12-01), None
patent: 61292643 (1986-12-01), None
patent: 67514 (1987-03-01), None
patent: 6267547 (1987-03-01), None
patent: 6292438 (1987-04-01), None
patent: 237454 (1987-10-01), None
patent: 62261004 (1987-11-01), None
patent: 1283925 (1988-05-01), None
patent: 63151019 (1988-06-01), None
patent: 63165851 (1988-07-01), None
patent: 63216052 (1988-09-01), None
patent: 63295350 (1988-11-01), None
patent: 147458 (1989-06-01), None
patent: 1257226 (1989-10-01), None
patent: 2140743 (1990-05-01), None
patent: 8213314 (1996-08-01), None
patent: 8227141 (1996-09-01), None
patent: 8227142 (1996-09-01), None
patent: 197708 (1977-08-01), None
patent: 570005 (1977-08-01), None
patent: 1151904 (1985-04-01), None
Japanese Laid-Open Patent Application No. 014492/2002, Notification of Reason for Rejection dated Sep. 10, 2002 (English translation included).
Ito, et al. “Photo-projection Image Distortion Corrections for lu Pattern Process”, May 1985, vol. J68, No. 5, pp 225-332.
SPIE vol. 470 “Optical Microlithography III . . . ”, (1984), pp 228-232, Prouty, et al. Spatial period division—A New technique for exposing submicrometer-lindwidth periodic and quasiperiodic patterns, Flanders, et al., J. Vac. Sci. Technol, 16(6), Nov./Dec. 1979, pp 1949-1952.
J. Vac Sci. Technol. B6(1), vol. 6, No. 1, Jan./Feb. 1988, pp. 150-153.
Ku, et al., “ Use of pi-phase shifting x-ray mask to increase the intensity slope at feature edges”, inJ. Vac. Sci. Technol., vol. 6, No. 1 (Jan./Feb. 1988), pp. 150-153.
Levenson, et al., “Improving Resolution in Photolithography with a Phase-Shifting Mask”, in IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 12, 1982, pp. 1828-1836.
Antonelli, Terry Stout and Kraus, LLP.
Chapman Mark A.
Renesas Technology Corp.
LandOfFree
Semiconductor integrated circuit device fabrication method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device fabrication method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device fabrication method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3605059