Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-04-25
1997-04-15
Tsai, Jey
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438949, H01L 2170, H01L 2700
Patent
active
056209185
ABSTRACT:
The invention relates to the fabrication of a cylindrical storage node in a stacked capacitor cell of DRAM. A fine, cylindrical slit is formed in an oxide layer on a conductor layer by electron beam lithography using a positive resist which undergoes a reversal to negative by a slight overexposure. By using a local reversal of the exposed resist layer to negative, a fine cylindrical pattern is easily produced in the resist layer, and the pattern is transferred to the oxide layer by etching. Then a conductor such as polysilicon is deposited on the oxide layer to fill the cylindrical slit with the deposited conductor. The conductor in the cylindrical slit appears as a cylindrical part of the storage node when the conductor film on the oxide layer surface and the oxide layer are successively removed. In the case of forming a storage node in the shape of double or multiple cylinder, cylindrical patterning of the resist layer is repeated before etching the underlying oxide layer.
REFERENCES:
patent: 5266512 (1993-11-01), Kirsch
patent: 5438010 (1995-08-01), Saeki
patent: 5476806 (1995-12-01), Roh et al.
W. Wakamiya et al., "Novel Stacked Capacitor Cell for 64Mb DRAM", 1989 VLSI Symposium, pp. 69-70.
NEC Corporation
Tsai Jey
LandOfFree
Method of producing cylindrical storage node of capacitor on sem does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing cylindrical storage node of capacitor on sem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing cylindrical storage node of capacitor on sem will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-360504