Light emitting diode having an adhesive layer and a...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S079000, C257S099000

Reexamination Certificate

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06987287

ABSTRACT:
A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

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F. S. Shieu et al., Effect of a Ti interlayer on the bond strength and thermal stability of the Cu/benzocyclobutene-divinyl tetramethyldisiloxane Interface, J. Adhesion Sci. Technol., 1998, pp. 19-28, vol. 12, No. 1, VSP, Netherlands.
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G. Dang et al., Comparison of Dry and Wet Etch Processes for Patterning SiO2/TiO2 Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers, Journal of The Electrochemical Society, 2001, G25-G28, vol., 148(2), The Electrochemical Society, Inc., NJ, USA.
T. Margalith et al., Indiumtin oxidecontacts to gallium nitride optoelectronic devices, Applied Physics Letters, Jun. 28, 1999, pp. 3930-3932, vol. 74, No. 26, American institute of Physics, USA.

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