Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Patent
1995-05-19
1998-08-25
Dang, Trung
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
438455, 438459, 438402, 438406, H01L 21322
Patent
active
057982945
ABSTRACT:
A silicon dioxide layer overlies a monocrystal silicon substrate and has a first upper surface. A first monocrystal silicon layer overlies the first upper surface and has phosphorus atoms diffused. A second monocrystal silicon layer overlies the first monocrystal silicon layer. The first monocrystal silicon layer may have phosphorus or silicon atoms each of which has a positive electric charge instead of the phosphorus atoms diffused. A lattice mismatching layer may overlie the first upper surface instead of the first monocrystal silicon layer. The lattice mismatching layer has parts in each of which misfit dislocation is caused. The first and the second monocrystal silicon layers may overlie the monocrystal silicon substrate and layer, respectively. In this event, a silicon glass layer is interposed between the first and the second monocrystal silicon layers. The second monocrystal silicon layer has phosphorus atoms diffused.
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Dang Trung
NEC Corporation
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