Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-04-25
2006-04-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S335000, C257S374000, C257SE21418, C257SE21419, C257SE29256
Reexamination Certificate
active
07034377
ABSTRACT:
To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading out gate polysilicon to a substrate surface, intersect each other. An island-like non-trench region, which is left without being subjected to etching, is divided into a plurality of smaller regions by one or more third trench section that connect with the first and second trench sections that form the mesh pattern. In each non-trench region, a contact section for connecting a drain region (or a source region) and an electrode is formed so as to be spread over all of the smaller regions in the non-trench region.
REFERENCES:
patent: 5539238 (1996-07-01), Malhi
patent: 5701026 (1997-12-01), Fujishima et al.
patent: 6693338 (2004-02-01), Saitoh et al.
patent: 2002/0179967 (2002-12-01), Fujishima
“A 30V Class Extremely Low On-resistance Meshed Trench Lateral Power MOSFET”; A Sugi et al.; IEEE Sep. 2002; pp. 297-300.
Fujishima Naoto
Kitamura Mutsumi
Sugi Akio
Tabuchi Katsuya
Fuji Electric Device Technology Co. Ltd.
Pham Long
Rao Shrininvas H.
Rossi Kimms & McDowell LLP
LandOfFree
Semiconductor device and method of manufacturing the device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3601838