Methods for forming a device isolating barrier and methods...

Details Methods for forming a device isolating barrier and methods... Methods for forming a device isolating barrier and methods...

2006-09-26

2006-09-26

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S426000

Reexamination Certificate

active

07112510

ABSTRACT:
Methods for forming a device isolating barrier, and methods for forming a gate electrode using the device isolation barrier are disclosed. In an illustrated method, a semiconductor device isolating barrier is formed by forming a pad oxide layer and a first nitride layer on a semiconductor substrate; forming a trench region by etching the pad oxide layer and the first nitride layer; forming spacers at sidewalls of the etched pad oxide layer and the etched first nitride layer; forming a first trench by etching the semiconductor substrate using the spacers and the etched first nitride layer as a mask; and, after forming a liner oxide layer and an oxide layer filling the trench, forming the device isolating barrier by flattening the liner oxide layer and the trench oxide layer to expose the etched first nitride layer.

REFERENCES:
patent: 6097076 (2000-08-01), Gonzalez et al.
patent: 6593175 (2003-07-01), Feudel et al.
patent: 6790754 (2004-09-01), Park
patent: 6849532 (2005-02-01), Kim
patent: 6852599 (2005-02-01), Kim
patent: 6855604 (2005-02-01), Lee
patent: 6864164 (2005-03-01), Dakshina-Murthy et al.

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