Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2006-04-04
2006-04-04
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S476000, C438S488000
Reexamination Certificate
active
07022589
ABSTRACT:
The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment rooms of n pieces (n>2) performing heat-treating, a preparatory heating room, and a cooling room, and heating a substrate using gas heated by heating units of n pieces as a heating source, wherein a gas-supplying unit is connected to a gas charge port of the cooling room, a discharge port of the cooling room is connected to a first gas-heating unit through a heat exchanger, a charge port of an m-th (1≦m≦(n−1)) treatment room is connected to a discharge port of an m-th gas-heating unit, a charge port of an n-th treatment room is connected to a discharge port of an n-th gas-heating unit, a discharge port of the n-th treatment room is connected to the heat exchanger, and discharge port of the heat exchanger is connected to gas charge port of the preparatory heating room.
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U.S. Appl. No. 10/098,688 (pending) to Yamazaki et al, filed Mar. 15, 2002 including specification, abstract, claims, drawings and PTO filing receipt.
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Ghyka Alexander
Semiconductor Energy Laboratory Co,. Ltd.
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