Semiconductor device having a tapered interconnection with...

Details Semiconductor device having a tapered interconnection with... Semiconductor device having a tapered interconnection with...

2006-05-23

2006-05-23

Chen, Jack (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S750000, C257S758000, C257S774000

Reexamination Certificate

active

07049703

ABSTRACT:
A semiconductor device includes a fine interconnection structure with low resistance at a through hole. A first interconnection is formed on a surface of a first layer insulating film. The first interconnection is tapered. An insulating layer is formed on the first interconnection and the first insulating film, and has a through hole that exposes an upper surface and a portion of a side surface of the first interconnection. The insulating layer covers a conductive portion of the first interconnection within the through hole. A second interconnection is provided over the insulating layer, and is electrically connected to the first interconnection through the through hole.

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