Resonant cavity light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S082000

Reexamination Certificate

active

07019330

ABSTRACT:
A light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of first conductivity type and a layer of second conductivity type is disposed in the resonant cavity. In some embodiments, first and second contacts are formed on the same side of the resonant cavity, forming a flip chip or epitaxy up device.

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European Search Report, 3 pages.

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