Electro-optical silicon devices

Details Electro-optical silicon devices Electro-optical silicon devices

1987-03-26

1988-11-29

Sikes, William L.

350 9612, 357 56, 357 19, G02B 610, G02B 600, H01L 2942, H01L 2906

Patent

active

047876913

ABSTRACT:
All silicon electrooptic devices for modulating and switching of guided light have been developed using the silicon-on-insulator approach. Generally, p-n junctions are formed in a silicon waveguide to selectively modulate and direct light by carrier refraction. An electrooptic phase modulator and several 2.times.2 electrooptic switches are described. The devices are particularly useful for manipulating light signals in the 1.3-1.6 micron range.

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"The Route to 3-D Chips" By Douglas, High Technology, Sep. 1983 (pp. 55-59).
"Multimode 2.times.2 Optical Crossbar Switch" by Electronics Letters, 27th Apr. 1978, vol. 14, No. 9, pp. 283-284.

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