Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-04-11
2006-04-11
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S255000, C438S398000
Reexamination Certificate
active
07026222
ABSTRACT:
A method of forming a capacitor is disclosed. The method includes forming a substrate assembly, and forming a first electrode on the substrate assembly. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric and the uppermost surface of the substrate assembly. The second electrode includes at least one non-smooth surface.
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Gealy F. Daniel
Graettinger Thomas M.
Kirkpatrick & Lockhart Nicholson & Graham LLP
Trinh Michael
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