Method of forming a capacitor

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S255000, C438S398000

Reexamination Certificate

active

07026222

ABSTRACT:
A method of forming a capacitor is disclosed. The method includes forming a substrate assembly, and forming a first electrode on the substrate assembly. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric and the uppermost surface of the substrate assembly. The second electrode includes at least one non-smooth surface.

REFERENCES:
patent: 5245206 (1993-09-01), Chu et al.
patent: 5313089 (1994-05-01), Jones, Jr.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5444013 (1995-08-01), Akram et al.
patent: 5478772 (1995-12-01), Fazan
patent: 5563089 (1996-10-01), Jost et al.
patent: 5563090 (1996-10-01), Lee et al.
patent: 5604696 (1997-02-01), Takaishi
patent: 5622893 (1997-04-01), Summerfelt et al.
patent: 5824590 (1998-10-01), New
patent: 5856937 (1999-01-01), Chu et al.
patent: 5866453 (1999-02-01), Prall et al.
patent: 6077742 (2000-06-01), Chen et al.
patent: 6087694 (2000-07-01), Ohno et al.
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6090704 (2000-07-01), Kim et al.
patent: 6114199 (2000-09-01), Isobe et al.
patent: 6153898 (2000-11-01), Watanabe et al.
patent: 6153903 (2000-11-01), Clampitt
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6171925 (2001-01-01), Graettinger et al.
patent: 6191443 (2001-02-01), Al-Shareef et al.
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 6265260 (2001-07-01), Alers et al.
patent: 6284655 (2001-09-01), Marsh
patent: 6507065 (2003-01-01), Figura et al.
patent: 2003/0057472 (2003-03-01), Gealy et al.
patent: 2003/0080369 (2003-05-01), Gealy et al.
patent: 2003/0100163 (2003-05-01), Gealy et al.
U.S. Appl. No. 09/286,807, filed Apr. 6, 1999, Gealy et al.
U.S. Appl. No. 09/770,699, filed Jan. 26, 2001, Gealy et al.
U.S. Appl. No. 10/159,695, filed May 30, 2002, Gealy et al.

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