Low-K dielectric material system for IC application

Details Low-K dielectric material system for IC application Low-K dielectric material system for IC application

2006-03-21

2006-03-21

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257S760000, C438S623000, C438S634000, C438S637000

Reexamination Certificate

active

07015581

ABSTRACT:
A low-k dielectric for use as an interlayer for an interconnect structure is provided. The dielectric of the present invention is an alkaline boron silicate glass which when formulated in certain compositional ranges can undergo spinodal decomposition when processed using certain thermal profiles. Spinodal decomposition is a chemical and physical separation of the silicate glass into a distinct interpenetrating microstructure which contains a substantially pure silicon dioxide network and a boron-rich network. The dimension (i.e., scale), and the amount of separation can be controlled through compositional and thermal control during the processing of the silicate glass.

REFERENCES:
patent: 3758284 (1973-09-01), Haller
patent: 3792987 (1974-02-01), Eaton
patent: 3843341 (1974-10-01), Hammel et al.
patent: 4933307 (1990-06-01), Marshall et al.
patent: 5846278 (1998-12-01), Jantzen et al.
patent: 6027796 (2000-02-01), Kondoh et al.
patent: 6358842 (2002-03-01), Zhou et al.
patent: 6444268 (2002-09-01), Lefkowitz et al.
patent: 6551656 (2003-04-01), Clough
patent: 2003/0211728 (2003-11-01), Mandal
patent: 2004/0029303 (2004-02-01), Hart et al.

Affiliated with

Also associated with

Rating

Low-K dielectric material system for IC application does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-K dielectric material system for IC application, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-K dielectric material system for IC application will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3593529