Semiconductor device with inductive component and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S277000, C257S622000

Reexamination Certificate

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07078784

ABSTRACT:
An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).

REFERENCES:
patent: 3881244 (1975-05-01), Kendall
patent: 4169000 (1979-09-01), Riseman
patent: 5336921 (1994-08-01), Sundaram et al.
patent: 6030877 (2000-02-01), Lee et al.
patent: 6114937 (2000-09-01), Burghartz et al.
patent: 2003/0170989 (2003-09-01), Bothra
patent: 06120036 (1994-04-01), None

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