Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-01-31
2006-01-31
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
Reexamination Certificate
active
06992392
ABSTRACT:
A semiconductor device100includes wiring layers12disposed in a specified pattern on a base10, and an interlayer dielectric layer20that covers the wiring layers12. The interlayer dielectric layer20includes a stress relieving dielectric layer22disposed in a specified pattern on the base10, and a planarization dielectric layer26that covers the wiring layers12and the stress relieving dielectric layers22, and is formed from a liquid dielectric member. The interlayer dielectric layer20may further include a base dielectric layer24and a cap dielectric layer28.
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Examination Report for corresponding Japanese Application EP-0319001.
Andujar Leonardo
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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