Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2006-05-09

2006-05-09

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S099000, C257S098000

Reexamination Certificate

active

07042012

ABSTRACT:
An insulation film150made of SiO2is formed on a p-type layer106,and a multiple thick film positive electrode120,which is a metal film formed through metal deposition, is formed on the insulation film150and on the p-type layer106at the central portion of which has a window and is exposed. The insulation film150has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film150is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.

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