Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-01-31

2006-01-31

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

Reexamination Certificate

active

06992009

ABSTRACT:
Provided is a method of manufacturing a semiconductor device, comprising preparing a base comprising a semiconductor substrate having a device surface side, a p-type semiconductor layer formed on the device surface side of the semiconductor substrate, a n-type semiconductor layer which is formed on the device surface side of the semiconductor substrate and forms a p-n junction together with the p-type semiconductor layer, and wirings formed above the semiconductor substrate and electrically connected to each other via the p-n junction, applying a chemical solution containing electrolytes to a device surface of the base, the wirings being exposed at the device surface of the base, and applying a liquid selected from the group consisting of anode water, oxidizing gas-dissolved water, radical-containing water, cathode water, reducing gas-dissolved water and an organic substance-adding solution to the device surface of the base.

REFERENCES:
patent: 5635053 (1997-06-01), Aoki et al.
patent: 6200899 (2001-03-01), Fournier
patent: 6569349 (2003-05-01), Wang et al.
patent: 2000-294524 (2000-10-01), None
patent: 2000-340531 (2000-12-01), None
patent: 2000-144092 (2001-05-01), None
patent: 2003-51481 (2003-02-01), None
patent: 2003-0014123 (2003-02-01), None
patent: WO 200044034 (2000-07-01), None
Stanley Wolf Silicon Processing for the VSLI era vol. 2 Lattice Press pp. 280-282,460,494,535.
Korean Office Action mailed Aug. 20, 2004 regarding prior art above and English translation.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3589076