Semiconductor light receiving device and manufacturing...

Details Semiconductor light receiving device and manufacturing... Semiconductor light receiving device and manufacturing...

2006-05-16

2006-05-16

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S443000, C257S457000

Reexamination Certificate

active

07045872

ABSTRACT:
An object of the present invention is to provide a highly sensitive semiconductor light receiving device wherein the efficiency of light convergence into the light receiving region has been increased. The semiconductor light receiving device includes a light receiving region formed on a semiconductor substrate, and an electrode formed in a peripheral portion of the light receiving region on the semiconductor substrate for transferring a charge generated through photoelectric conversion in the light receiving region to the outside of the light receiving region, wherein a part of or the entirety of the peripheral portion of the electrode is processed so as to recede toward the center of the electrode as the electrode is away from the semiconductor substrate. In addition, two types of etching of isotropic etching and anisotropic etching are used at the time of the pattern formation of the electrode at least once, respectively.

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patent: 1993-0017195 (1993-08-01), None
patent: 2000-0031410 (2000-06-01), None

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