Magnetic resistance device

Details Magnetic resistance device Magnetic resistance device

2006-01-31

2006-01-31

Cao, Allen (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06992869

ABSTRACT:
In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices2employing a laminated structure comprised of antiferromagnetic film8, lower magnetic layer9, barrier film10and upper magnetic layer11are independently and separately formed by ion beam etching on a lower electrode3and in common with said lower electrode3provided on a substrate5. A pair of independent upper electrodes4are formed on upper magnetic layer11. As a result, a pair of magnetic tunnel resistance devices2are formed connected in series on substrate5.

REFERENCES:
patent: 6333842 (2001-12-01), Nobuyuki et al.
patent: 6469879 (2002-10-01), Redon et al.
patent: 6482657 (2002-11-01), Shimazawa
patent: 6563682 (2003-05-01), Sugawara et al.
patent: 6567244 (2003-05-01), Gill
patent: 6583967 (2003-06-01), Kasahara et al.
patent: 6639766 (2003-10-01), Nobuyuki et al.
patent: 6710986 (2004-03-01), Sato et al.
patent: 11-97762 (1999-04-01), None
patent: 11-112054 (1999-04-01), None
patent: 11-135857 (1999-05-01), None

Affiliated with

Also associated with

Rating

Magnetic resistance device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic resistance device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic resistance device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3587698