Method of manufacturing a semiconductor device having a pluralit

Details Method of manufacturing a semiconductor device having a pluralit Method of manufacturing a semiconductor device having a pluralit

1988-09-26

1991-05-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, 437 70, 437238, 437228, 156628, 148DIG117, H01L 21265

Patent

active

050195263

ABSTRACT:
A method of manufacturing a semiconductor apparatus having a plurality of elements formed on a substrate comprises forming a pad oxidized film on the surface of the semiconductor substrate, forming a pattern of silicon nitride film to coat device areas on the pad oxidized film, and injecting boron ions into that surface of the pad oxidized film where no silicon nitride film is present, thereby to form a channel stopper region. Using the pattern of the silicon nitride film as a mask, a heat oxidized film is then formed on an elements separating region by heat oxidization, and ions of Si, N, C, or the like are injected into the surface of the heat oxidized film with such an acceleration energy that the ions are not injected into the silicon nitride film thereby to change the quality of the heat oxidized film. The silicon nitride film is removed by etching and the heat oxidized film is etching-treated by a solution of the hydrofluoric acid group to etching-remove particularly the bird's beak portions each of which is present along and under the peripheral rim of an element area of the silicon nitride film.

REFERENCES:
patent: 3752711 (1973-08-01), Kooi
patent: 3970486 (1976-07-01), Kooi
patent: 4407696 (1983-10-01), Han et al.
patent: 4577394 (1986-03-01), Peel
patent: 4746625 (1988-05-01), Morita et al.

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