Single semiconductor element in a flip chip construction

Details Single semiconductor element in a flip chip construction Single semiconductor element in a flip chip construction

2006-05-09

2006-05-09

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S778000

Reexamination Certificate

active

07042096

ABSTRACT:
A substrate layer is provided at the rear side of a single semiconductor element. An active layer is arranged between the substrate layer and a contact side of the single semiconductor element. At least two solder contacts are electrically connected to the active layer and project beyond the contact side in order to make possible a direct soldering of the single semiconductor element to a carrier board. The contact side is provided with a glass passivation layer. Alternatively or additionally to this, at least one side face of the single semiconductor element is provided with an insulator layer in order to avoid short circuits on the soldering of the single semiconductor element to the carrier board. It is furthermore possible for the solder contacts to have different outlines at the contact side.

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