Thin-film electrode layer including β-ta and thin-film...

Details Thin-film electrode layer including β-ta and thin-film... Thin-film electrode layer including β-ta and thin-film...

2006-09-05

2006-09-05

Heinz, A. J. (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07102858

ABSTRACT:
A thin-film electrode layer having a superior electromigration resistance is disclosed. The thin-film electrode layer includes a first base layer composed of β-Ta, a main conductive layer composed of Au, and a protective layer. The protective layer is a composite of a Cr sublayer and an α-Ta sublayer. A thin-film magnetic head having the thin-film electrode layers and a method for forming electrodes in the thin-film magnetic head are also disclosed.

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patent: 5883764 (1999-03-01), Pinarbasi
patent: 6359760 (2002-03-01), Kanno
patent: 6713801 (2004-03-01), Sin et al.
patent: 0 590 905 (1994-04-01), None

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