Method for preparing a high mobility, lightly-doped channel mis-

Details Method for preparing a high mobility, lightly-doped channel mis- Method for preparing a high mobility, lightly-doped channel mis-

1990-04-30

1991-05-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 45, 437 27, 437 34, H01L 21334

Patent

active

050195204

ABSTRACT:
A method for preparing a MISFET of a minute size with the channel length of not more than 2 .mu.m between a source and a drain, comprises the steps of forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate, and introducing ions at a predetermined energy into the well region by using the mask. The predetermined energy is such as to form a peak of the impurity concentration distribution at a position deeper than the bottom surface of the source and the drain and to maintain the layer of at least a partial layer of the channel at an impurity concentration lower than 10.sup.16 cm.sup.-3 so that a high speed carrier movement in the channel is provided without causing a punch-through phenomenon.

REFERENCES:
patent: 3289504 (1974-02-01), Jaddam
patent: 4354307 (1982-10-01), Vinson et al.
patent: 4734382 (1988-03-01), Krishna

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