Method for forming a field emission cold cathode

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

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445 50, H01J 900, H01J 904

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active

060332778

ABSTRACT:
The present invention provides a method for reshaping up a cone-like electrode which is made of a refractory metal containing silicon. The method comprises the following steps. A surface of the cone-like electrode is subjected to an oxidation of silicon which is contained in the refractory metal. The oxidation is generated at rates which increase toward a top portion of the cone-like electrode. As a result, a silicon oxide film is formed, which coats the cone-like electrode. The silicon oxide film has thickness which gradually increase toward a bottom portion of the cone-like electrode. An interface between the silicon oxide film and the cone-like electrode has sloped angles which increase toward the top portion. The silicon oxide film is removed to thereby expose a reshaped cone electrode which has a sharply pointed top. The reshaped cone electrode has a surface having sloped angles which increase toward the sharply pointed top.

REFERENCES:
patent: 3921022 (1975-11-01), Levine
patent: 4690744 (1987-09-01), Naoe et al.
patent: 4855636 (1989-08-01), Busta et al.
patent: 4874497 (1989-10-01), Matsuoka et al.
patent: 4929321 (1990-05-01), Buhl
patent: 4931307 (1990-06-01), Sugita et al.
patent: 5201992 (1993-04-01), Marcus et al.
patent: 5250779 (1993-10-01), Kaufmann et al.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5316511 (1994-05-01), Lee
patent: 5389026 (1995-02-01), Fukuta et al.
patent: 5435900 (1995-07-01), Gorokhovsky
Y. Choi et al., "16Mbit Synchronous DRAM with 125Mbytes/sec Data Rate", 1993 Symposium on VLSI Circuits, May 1993, pp. 65-66.
S. Gowni et al., "A 9NS 32K X 9, BICMOS TTL Synchronous Cache Ram with Burst Mode Access", Proceedings of the IEEE 1992 Custom Integrated Circuits Conference, May 3-6, 1992, pp. 781-784.

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