Semiconductor device and method for fabricating the device

Details Semiconductor device and method for fabricating the device Semiconductor device and method for fabricating the device

2006-07-18

2006-07-18

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000

Reexamination Certificate

active

07078811

ABSTRACT:
There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductor5and a grounding wiring layer10, which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portion17since they have a hardness lower than that of a through hole insulator11made of silicon nitride. The through hole insulator11is selectively etched by a reactive ion etching method until the through hole insulator11comes to have a height equal to the height of a bottom portion19of the dishing portion17of the through hole conductor5. The through hole conductors5and25are aligned with each other, and the bonding surfaces12and22are bonded to each other in a solid state bonding manner.

REFERENCES:
patent: 4612083 (1986-09-01), Yasumoto et al.
patent: 4939568 (1990-07-01), Kato et al.
patent: 5939789 (1999-08-01), Kawai et al.
patent: 5986339 (1999-11-01), Pai et al.
patent: 6080640 (2000-06-01), Gardner et al.
patent: 6281576 (2001-08-01), Hackey et al.
patent: 6465892 (2002-10-01), Suga
patent: 0 700 088 (1996-03-01), None
patent: 11-284066 (1999-10-01), None
patent: WO 89/03122 (1989-04-01), None
U.S. Appl. No. 09/548,916, filed Apr. 13, 2000, entitled “Semiconductor Device and Manufacturing Method Therefor”.

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3576514