Photolithographic mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S030000

Reexamination Certificate

active

07078133

ABSTRACT:
A photolithographic mask has the advantage that a combination of dummy structures, whose pattern is imaged into the resist layer, and auxiliary structures, whose pattern is not imaged into the resist layer, makes it possible to achieve a significant improvement in the imaging properties of the main structures which are disposed at an edge of a region containing a multiplicity of main structures. In particular, constrictions at the structures can be significantly reduced or completely avoided and/or a so-called “tilting” of the structures under non-optimum focus conditions is significantly reduced or completely avoided.

REFERENCES:
patent: 6001512 (1999-12-01), Tzu et al.
patent: 6022644 (2000-02-01), Lin et al.
patent: 6294295 (2001-09-01), Lin et al.
patent: 2002/0006554 (2002-01-01), Fischer et al.
patent: 100 21 096 (2001-10-01), None
patent: 1 174 764 (2002-01-01), None

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