Semiconductor device capable of generating ripple-free...

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Reexamination Certificate

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C365S189090, C365S189070, C365S185210

Reexamination Certificate

active

07072238

ABSTRACT:
A semiconductor device that generates a regulated high voltage. The device includes, a high voltage generation circuit for supplying a high voltage to the first power line, a current bypass circuit for supplying current to a second power line from the first power line, a PMOS transistor coupled between a first power line and the second power line, and a controller for controlling the drive current of the PMOS transistor in response to the voltage on the second power line.

REFERENCES:
patent: 5426616 (1995-06-01), Kajigaya et al.
patent: 5499209 (1996-03-01), Oowaki et al.
patent: 5519656 (1996-05-01), Maccarrone et al.
patent: 5642309 (1997-06-01), Kim et al.
patent: 5689460 (1997-11-01), Ooishi
patent: 5881014 (1999-03-01), Ooishi
patent: 6031778 (2000-02-01), Makino et al.
patent: 6038178 (2000-03-01), Oh
patent: 6061270 (2000-05-01), Choi
patent: 6335881 (2002-01-01), Kim et al.
patent: 6370062 (2002-04-01), Choi
patent: 2002-150786 (2002-05-01), None
patent: 2003-0057885 (2003-07-01), None
English language abstract of Korean Publication No. 2003-0057885.
English language abstract of Japanese Publication No. 2002-150786.

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