Magnetic sensing element with in-stack biasing using...

Details Magnetic sensing element with in-stack biasing using... Magnetic sensing element with in-stack biasing using...

2006-04-04

2006-04-04

Renner, Craig A. (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200

Reexamination Certificate

active

07023670

ABSTRACT:
In a magnetic sensing element, the magnetization direction of a ferromagnetic layer is pinned by an exchange coupling magnetic field between a second antiferromagnetic layer and the ferromagnetic layer, and the magnetization of a free magnetic layer is oriented in a direction substantially perpendicular to the magnetization of a pinned magnetic layer by an RKKY interaction between the ferromagnetic layer and the free magnetic layer with a nonmagnetic layer therebetween. Consequently, the control of the magnetization direction of the free magnetic layer is adjusted in two stages, i.e., by the magnitude of the exchange coupling magnetic field between the second antiferromagnetic layer and the ferromagnetic layer and by the magnitude of the RKKY interaction between the ferromagnetic layer and the free magnetic layer, thus facilitating fine controls.

REFERENCES:
patent: 6023395 (2000-02-01), Dill et al.
patent: 6473279 (2002-10-01), Smith et al.
patent: 6741432 (2004-05-01), Pinarbasi
patent: 6741433 (2004-05-01), Nishioka
patent: 6747852 (2004-06-01), Lin et al.
patent: 6807033 (2004-10-01), Zhu
patent: 6831816 (2004-12-01), Gill
patent: 2003/0179513 (2003-09-01), Pinarbasi
patent: 2003/0235016 (2003-12-01), Gill

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