Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-09-05
2006-09-05
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S745000, C438S508000
Reexamination Certificate
active
07101809
ABSTRACT:
In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can etch to a substantially equal etching rate by executing only one etching on the each metal layer composing the stacked layer. A method of manufacturing a substrate for an electronic device uses the etchant, producing an electronic device having the substrate.In order to achieve the object, the etchant has fluoric acid, periodic acid and sulfuric acid wherein the total weight ratio of the fluoric acid and periodic acid is 0.05˜30 wt %, the weight ratio of the sulfuric acid is 0.05˜20 wt %, the weight ratio of periodic acid to fluoric acid is 0.01˜2 wt %. Also each layer of wiring (5, 12, 14) formed by stacking Al layer or Al alloy layer and Ti layer or Ti alloy layer can be uniformly etched to substantially equal etching rate by the etchant.
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LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Nelms David
Nguyen Dao H.
LandOfFree
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