Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-01-10
2006-01-10
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010, C372S045013, C372S046012, C372S049010, C372S049010, C372S049010, C372S050121
Reexamination Certificate
active
06985504
ABSTRACT:
A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.
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Fujimori Shoji
Kidoguchi Isao
Ueda Tetsuo
Yamane Keiji
Flores-Ruiz Delma R.
Hamre Schumann Mueller & Larson P.C.
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