Method of forming a liquid crystal display

Details Method of forming a liquid crystal display Method of forming a liquid crystal display

2006-09-26

2006-09-26

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000, C438S239000, C438S378000, C438S609000, C438S694000, C438S697000, C438S699000

Reexamination Certificate

active

07112458

ABSTRACT:
An active layer of a P-type low temperature polysilicon thin film transistor and a bottom electrode of a storage capacitor are first formed. Then, a P-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

REFERENCES:
patent: 6773467 (2004-08-01), Shih
patent: 6924874 (2005-08-01), Lin et al.
patent: P2000-305107 (2000-11-01), None
patent: P2001-189459 (2001-07-01), None
patent: P2003-75870 (2003-03-01), None

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